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首页> 外文会议>14th International Conference on Vacuum WEB Coating, 14th, Oct 25-27, 2000, Reno, Nevada >Reactive Sputtering
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Reactive Sputtering

机译：反应溅射

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The reactive sputter deposition of both conductive and non-conductive films has been greatly facilitated with partial pressure control of the reactive gas and pulsed dc power. Online automatic partial pressure control of the reactive gas prevents the poisoning of the target surface during deposition, which leads to compound film deposition rates that approach or are equal to those for the pure metal rate. Pulsed dc power, where the polarity of the voltage on the sputtering target is alternately switched briefly between negative and positive, prevents arcing on the target surface during the deposition of non-conducting films. With both pulsed dc power and partial pressure control of the reactive gas, films such as aluminum oxide can now be deposited reactively at rates up to 78% of the pure metal rate.
机译：通过对反应气体和脉冲直流功率进行分压控制，可以大大促进导电膜和非导电膜的反应性溅射沉积。在线自动控制反应气体的分压可防止在沉积过程中靶表面中毒，从而导致复合膜的沉积速率接近或等于纯金属的沉积速率。脉冲直流功率（在溅射靶上电压的极性在负和正之间短暂交替切换）可防止在非导电膜沉积过程中在靶表面上产生电弧。通过脉冲直流功率和反应气体的分压控制，现在可以以高达纯金属速率的78％的速率反应性沉积诸如氧化铝之类的薄膜。

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