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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Analysis of physical and technological aspects of monolithic optoelectronic devices for on - board systems of remote sounding Part Ⅱ: experimental investigation
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Analysis of physical and technological aspects of monolithic optoelectronic devices for on - board systems of remote sounding Part Ⅱ: experimental investigation

机译：遥测车载系统的单片光电器件的物理和技术方面的分析第二部分：实验研究

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With account of previous analysis of optoelectronic technologies for on - board systems experimental investigation results are presented for a number of structures (monocrystalline silicon, silicon on sapphire (SOS) structures, CdSe/SiO_2/Si, GaN and InGaN on sapphire) illustrating the integrated optoelectronics possibilities for future very large-scale optoelectronic integrated circuirs realization. Data are presented for luminescence and photosensitivity characteristics of devices based on above-mentioned structures. Experimental results on electro - optic conversion characteristics in emitter - photodetector geometry are presented for silicon and sapphire substrate based devices. Different electroluminescence mechanisms in both forward and reverse biased mode with thermalized and hot carriers have been studied. It's shown that noticeable output signal can be obtained even using SOS - emitters. It's emphasized that the greatest potential for future integrated optoelectronics have sapphire substrate based devices. Physical and technological aspects of monolithic devices are considered including spectral characteristics, efficiency, resolution, cross - stalk and pixel size limitations, low - current operation mode.
机译：鉴于先前对板载系统的光电技术的分析，给出了许多结构（单晶硅，蓝宝石上的硅（SOS）结构，CdSe / SiO_2 / Si，蓝宝石上的GaN和InGaN）的实验研究结果，从而说明了集成未来超大规模光电集成电路实现的可能性。给出了基于上述结构的器件的发光和光敏特性的数据。提出了基于硅和蓝宝石衬底的器件的光电转换特性的实验结果。研究了在正向和反向偏置模式下热载流子和热载流子的不同电致发光机理。结果表明，即使使用SOS-发射器，也可以获得明显的输出信号。需要强调的是，未来集成光电的最大潜力是基于蓝宝石衬底的器件。考虑了单片器件的物理和技术方面，包括光谱特性，效率，分辨率，串扰和像素大小限制，低电流操作模式。

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