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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Improvement of optical method of oxygen-in-silicon characterization and design consideration on measuring setup for detailed nondestructive mapping of interstitial oxygen
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Improvement of optical method of oxygen-in-silicon characterization and design consideration on measuring setup for detailed nondestructive mapping of interstitial oxygen

机译：硅中氧表征光学方法的改进和间隙氧详细无损测绘的测量装置设计考虑

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摘要

Under the today's tendency of progressive growth of integration level and diminishing of the basic element size of microelectronic devices, the significance of control of spatial distribution of defect-inducing impurities during device processing treatments increases. One of the most important impurities for silicon microelectronics is oxygen, which already presents in the initial Czochralski-grown silicon. Existing standard optical methods of measuring interstitial O-in-Si content based on analysis of silicon wafer's transmission spectra on the IR optical band of ～ 9 μm doesn't provide the desired degree of spatial resolution. The purpose of this work is to modify measuring method in such a way to make it possible for one to obtain, in relatively fast manner, oxygen distribution "map" over the wafer's area, with spatial resolution up to 30..50μm. The work describes the approach to measuring setup construction, which provides oxygen distribution control in silicon wafers containing O in concentration lying between 10~(17)...3*10~(18) cm~3 with the accuracy of 5% and with the above localization degree. Different realizations of the optical source, projection optics, detector and signal processing system are discussed, and the best choice is grounded. Presented are the technical estimations showing the evidence for the measuring setup to provide the desired features when tunable laser diode is used as a light source along with the special parabolic collimator, cylindrical projection optics and commercially available time-delay-and-integration CMT LWIR detectors.
机译：在当今集成度逐渐增长和微电子器件的基本元件尺寸减小的趋势下，在器件加工处理过程中控制引起缺陷的杂质的空间分布的重要性日益增加。硅微电子学最重要的杂质之一是氧，氧已存在于最初的切克劳斯基生长的硅中。现有的基于在〜9μm的红外光带上对硅片的透射光谱进行分析的测量间隙中O-in-Si含量的标准光学方法无法提供理想的空间分辨率。这项工作的目的是以这种方式修改测量方法，使人们能够以相对较快的方式获得整个晶片区域上的氧分布“图”，其空间分辨率可达30..50μm。这项工作描述了一种测量设置结构的方法，该方法可以控制含O浓度在10〜（17）... 3 * 10〜（18）cm〜3之间的O的硅片中的氧气分布，精度为5％，并且以上本地化程度。讨论了光源，投影光学系统，检测器和信号处理系统的不同实现方式，并且最佳选择是扎根的。呈现的技术估算为使用可调激光二极管作为光源以及特殊的抛物线准直仪，圆柱投影光学器件和市售时延和积分CMT LWIR检测器提供了理想的测量设置证据，以提供所需的功能。

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