ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE

机译：隔离HgCdTe结二极管中的表面和大量贡献

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This paper reports the possibility of assessing the relative surface and bulk contributions in HgCdTe junction diodes by analysing the Current - voltage (I - V) and dynamic impedance - voltage (R_d - V) characteristics of an individual diode. As an example, an analysis of the experimental data obtained on diodes fabricated in our laboratory on bulk grown p-type HgCdTe wafers using B~+ implantation and ZnS passivating layers will be presented.

机译：本文报告了通过分析单个二极管的电流-电压（I-V）和动态阻抗-电压（R_d-V）特性来评估HgCdTe结二极管的相对表面和体积贡献的可能性。例如，将对在我们实验室中使用B〜+注入和ZnS钝化层在批量生长的p型HgCdTe晶片上制造的二极管上获得的实验数据进行分析。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.215-222|共8页
会议地点 Moscow(RU)
作者
Vishnu Gopal; Sudha Gupta; R. K. Bhan; R. Pal; P. K. Chaudhary; V. Kumar;
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Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi - 110054, INDIA;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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3. Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects [J] . Vanya Srivastav, R. Pal, V. Venkataraman Journal of Applied Physics . 2012,第3期

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4. ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE [C] . Vishnu Gopal, Sudha Gupta, R. K. Bhan, International conference on photoelectronics and night vision devices . 2003

机译：HGCDTE结二极管中隔离表面和散装贡献
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ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE

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