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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg_(1-x)Cd_xTe under ion-beam milling
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Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg_(1-x)Cd_xTe under ion-beam milling

机译：离子束铣削过程中p-Hg_（1-x）Cd_xTe中类型电导率转换时产生汞扩散源的机理

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摘要

An analysis of the relaxation process for cation defects in Hg_(1-x)Cd_xTe that form in the thermal spike at ion-beam milling (IBM) taking into account the neutral mercury bi-vacancies has been performed. It has been enabled to define a correct expression for concentration of the interstitial mercury created at IBM in the mercury diffusion source that is a boundary condition for equations of the diffusion kinetics. Expressions for depth of the p-n conductivity type conversion in both vacancy-doped p-Hg_(1-x)Cd_xTe and one doped with As, Sb were obtained. There was a good accord between computed dependence of the conversion depth on the ion dose for vacancy-doped Hg_(1-x)Cd_xTe (x≈0.2) with available literature experimental data. This fact well confirm the model adequacy.
机译：考虑到中性汞双空位，对离子束研磨（IBM）的热尖峰中形成的Hg_（1-x）Cd_xTe中的阳离子缺陷的弛豫过程进行了分析。它能够为在汞扩散源中IBM产生的间隙汞浓度定义正确的表达式，这是扩散动力学方程的边界条件。得到了空位掺杂的p-Hg_（1-x）Cd_xTe和掺杂有As，Sb的p-n导电类型转换深度的表达式。对于空位掺杂的Hg_（1-x）Cd_xTe（x≈0.2），转换深度对离子剂量的计算依赖性与现有文献实验数据之间存在良好的一致性。这个事实很好地证实了模型的适当性。

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