Photoelectronics for a new generation of electron-optical equipment

机译：用于新一代电子光学设备的光电

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Results of the latest developments of technologies of photodetectors and photodetective assemblies including multi-element and matrix ones for IR-spectral range were discussed. Technologies for photodetectors based on CMT photodiodes for thermal imaging equipment operating on TDI mode (2x256, 4x288) or in a "staring" mode (384x288) as well as on the basis of photodiodes of indium antimonide received a large development effort. Technologies for manufacturing of high-speed photodetective assemblies for recording of pulse radiation in a wide interval of wavelengthes from 0,3 to 11 μm for laser direction finding and metrology are actively developed. An analysis of up-to-date state of photoelectronics was carried out and main physics and technological problems of making photosensitive materials, photosensitive elements, cooling and image processing systems was observed.

机译：讨论了光电探测器和光电探测器组件技术的最新发展成果，包括用于红外光谱范围的多元素和矩阵技术。用于热成像设备的基于CMT光电二极管的光电探测器技术在TDI模式（2x256、4x288）或“凝视”模式（384x288）以及基于锑化铟的光电二极管的基础上进行了大量的开发工作。积极开发用于在0.3至11μm的宽波长范围内记录脉冲辐射以记录激光方向和进行计量的高速光电检测组件的制造技术。对光电子学的最新状态进行了分析，观察了制造光敏材料，光敏元件，冷却和图像处理系统的主要物理技术问题。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.1-12|共12页
会议地点 Moscow(RU)
作者
V.P.Ponomarenko; A.M.Filachev;
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作者单位

State Unitary Enterprice "RDP Center ,,Orion", Moscow, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
CMT; InSb; PbS; PbSe; microbolometers; photodetector; photoelectronic module; TDI mode; photodetective assembly;

机译：CMT; InSb; PbS; PbSe;微量辐射热计;光电探测器;光电模块; TDI模式;光电探测器组件;

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Photoelectronics for a new generation of electron-optical equipment

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