Properties of Schottky Barrier p-Cd_xHg_(1-x)Te Structures with Metal-Tunnel Transparent Dielectric

机译：金属隧道透明电介质的肖特基势垒p-Cd_xHg_（1-x）Te结构的性质

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Potential barriers in Schottky diodes with a metal-tunnel transparent dielectric based on Cd_xHg_(1-x)Te (CMT) with x～0.2 have been studied. We used In, Tn, Al and Cr as metal barriers. Superthin dielectric, and fluorine plasma films were deposited between the CMT surface and a metal.

机译：研究了基于x〜0.2的Cd_xHg_（1-x）Te（CMT）的金属隧道透明电介质肖特基二极管的势垒。我们使用In，Tn，Al和Cr作为金属阻挡层。在CMT表面和金属之间沉积了超薄介电膜和氟等离子体膜。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.191-199|共9页
会议地点 Moscow(RU)
作者
V. Damnjanovic; V. P. Ponomarenko;
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Faculty of Mining and Geology, University of Belgrade, Yugoslavia;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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Properties of Schottky Barrier p-Cd_xHg_(1-x)Te Structures with Metal-Tunnel Transparent Dielectric

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