首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Reverse currents of double layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation
【24h】

Reverse currents of double layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation

机译:在Shockley-Read和Auger载流子产生的条件下双层异质结二极管的反向电流

获取原文
获取原文并翻译 | 示例

摘要

The paper theoretically investigates the possibility of formation of negative differential resistance (NDR) region on the current-voltage characteristic (CVC) reverse branch of a diode with double layer heterojunction (DLHJ) in the diode's base. The NDR formation is caused by decreasing the carrier thermal generation in the narrow gap part of the base with the thickness of the order of the Debye screening length at increase of the reverse bias. It is shown that the most favourable conditions for manifestation of the NDR are realized in the case when the carrier lifetime in the base region is determined by the Auger processes.
机译:本文从理论上研究了在二极管基极中具有双层异质结(DLHJ)的二极管的电流-电压特性(CVC)反向分支上形成负差分电阻(NDR)区域的可能性。 NDR的形成是由于随着反向偏压的增加,基底的窄间隙部分中载流子的发热减小,而载流子的产生厚度为Debye屏蔽长度的量级。结果表明,在基极区的载流子寿命通过俄歇过程确定的情况下,实现了NDR表现的最有利条件。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号