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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >THE RECENT AND PROSPECTIVE DEVELOPMENTS OF COOLED IR FPAS FOR DOUBLE APPLICATION AT ELECTRON NRI
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THE RECENT AND PROSPECTIVE DEVELOPMENTS OF COOLED IR FPAS FOR DOUBLE APPLICATION AT ELECTRON NRI

机译：NIR电子领域可双重应用的红外IR FPAS的最新研究与展望

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The recent and prospective developments of monolithic silicon IR Schottky-barrier staring focal plane arrays (IR SB FPAs), photodetector assembly, and digital thermal imaging cameras (TICs) at Electron National Research Institute (Electron NRI) are considered. Basic parameters for IR SB FPAs with 256x256 and 512x512 pixels, and TICs based on these arrays are presented. The problems emerged while proceeding from the developments of IR SB FPAs for the wavelength range from 3 μm to 5 μm to the developments of those ones for LWIR range are indicated (an abrupt increase in the level of background illumination, a decrease in operating dynamic range, a decrease in transfer efficiency in photodetectors with CCD architecture). Possibility for further improvement in basic parameters of IR SB FPAs are discussed (a decrease in threshold signal power down to 0.5/1.0·10~(13) W/element with an increase in quantum efficiency, a decrease in output noise and proceeding to Schottky barriers of degenerated semiconductor/silicon heterojunction, and implementation of these array parameters in photodetector assembly with improved thermal background shielding taking into consideration an optical structure of TIC for concrete application). It is concluded that relative simplicity of the technology and expected low cost of monolithic silicon IR SB FPAs with basic parameters compared with hybrid IR FPAs for the wavelength ranges from 3 μm to 5 μm and from 8 μm to 12 μm maintain large monolithic IR SB FPAs as a basis for developments of double application digital TICs in the Russian Federation.
机译：考虑了美国国家电子研究所（Electron NRI）的单片硅IR肖特基势垒凝视焦平面阵列（IR SB FPA），光电探测器组件和数字热成像相机（TIC）的最新和预期发展。介绍了具有256x256和512x512像素的IR SB FPA的基本参数，以及基于这些阵列的TIC。从3微米至5微米波长范围的IR SB FPA的发展到LWIR范围的那些发展的过程中出现的问题都被指出（背景照明水平突然增加，工作动态范围减小，降低了采用CCD架构的光电探测器的传输效率）。讨论了进一步改善IR SB FPA基本参数的可能性（将阈值信号功率降低至0.5 / 1.0·10〜（13）W / e，随着量子效率的提高，输出噪声的降低，并进入肖特基退化的半导体/硅异质结的势垒，以及在具有改进的热本底屏蔽的光电检测器组件中实现这些阵列参数，同时考虑到TIC的光学结构以用于具体应用）。结论是，与混合IR FPA相比，在3μm至5μm和8μm至12μm的波长范围内，具有基本参数的单片硅IR SB FPA技术相对简单，并且预期成本较低，可保持较大的单片IR SB FPA作为俄罗斯联邦双重应用数字TIC的发展基础。

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