首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Functionalities of the Cd_(1-x)Zn_xSe films, deposited from a water solution, in IR region of a spectrum
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Functionalities of the Cd_(1-x)Zn_xSe films, deposited from a water solution, in IR region of a spectrum

机译:从水溶液中沉积的Cd_(1-x)Zn_xSe膜在光谱的红外区域中的功能

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In the present work the features of an impurity and induced impurity photoconductivities in IR region, and also anomalous photoconduction and photochemical reaction in Cd_(1-x)Zn_xSe films are considered depending on film deposition and heat treatment (HT) modes. The formation of Cd_i-Cd_i, Zn_i-Zn_i, V_(Se)-Zn_i etc. associations in Cd_(1-x)Zn_xSe films, providing occurrence of optical active electronic states, carried in an interval of energy 0.3/0.6 eV, allows to use of these films for creation non-cooled photodelectors of IR-range. At illumination of films by λ=0.95 μm light, the anomalous photoconductivity and photomemory phenomenon were observed, connected with defects of metastable states, which concentration can be controlled by film structure, deposition and HT modes, and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. The photochemical reaction with activation energy of 0.17/0.21 eV, was observed at illumination (by λ=1.25 μm light) of Cd_(0.8)Zn_(0.2)Se films heart treated on air during 10/15 minutes. It represents a disintegration process of donor-acceptor pairs, consisting r-centres and Cd_i. Zn_i donors, and caused by precipitation conditions and HT.
机译:在当前工作中,取决于膜沉积和热处理(HT)模式,考虑了IR区域中的杂质和诱导的杂质光电导的特征,以及Cd_(1-x)Zn_xSe薄膜中的异常光电导和光化学反应。 Cd_(1-x)Zn_xSe薄膜中Cd_i-Cd_i,Zn_i-Zn_i,V_(Se)-Zn_i等缔合的形成提供了以能量间隔0.3 / 0.6 eV携带的光学活性电子态的出现将这些膜用于创建红外范围的非冷却光电探测器。在用λ= 0.95μm的光照射薄膜时,观察到异常的光电导和光记忆现象,并与亚稳态的缺陷有关,其浓度可以通过薄膜结构,沉积和HT模式来控制,并且可以通过没有基本位置的隧道跃迁来限制电子和r中心和s中心之间的空穴。在空气中经过10/15分钟的时间处理过的Cd_(0.8)Zn_(0.2)Se薄膜的光照下(通过λ= 1.25μm的光)观察到活化能为0.17 / 0.21 eV的光化学反应。它代表了由r-中心和Cd_i组成的供体-受体对的分解过程。 Zn_i供体,是由降水条件和高温引起的。

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