The Properties of Schottky-Barrier Photodiodes Based on Cd_xHg_(1-x)Te with Tunnel Transparent Dielectric

机译：基于Cd_xHg_（1-x）Te的具有隧道透明介质的肖特基势垒光电二极管的特性

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The results are presented on the basis of characteristics of p-type CdHgTe (CMT) diodes with metal -tunnel transparent dielectric - semiconductor (MTTD photodiodes) in the 8-11 μm spectral range.

机译：基于在8-11μm光谱范围内具有金属-隧道透明电介质-半导体（MTTD光电二极管）的p型CdHgTe（CMT）二极管的特性，给出了结果。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.200-205|共6页
会议地点 Moscow(RU)
作者
V. Damnjanovic; V. P. Ponomarenko;
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作者单位

Faculty of Mining and Geology, University of Belgrade, Yugoslavia;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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The Properties of Schottky-Barrier Photodiodes Based on Cd_xHg_(1-x)Te with Tunnel Transparent Dielectric

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