128x128 and 288x384 InSb array photodetective assemblies for 3/5 μm spectral range

机译：适用于3/5μm光谱范围的128x128和288x384 InSb阵列光电探测器组件

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This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb -p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384 and 128x128-element p+-on-n diodes formed by Be~+- implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6/8)10~(-13) W/pixel at 2·10~(-3) s storage time.

机译：本文介绍了基于InSb -p-MOS混合多路复用器的高性能红外焦平面阵列（IRFPA）所使用的技术。中波长红外（MWIR）光电二极管阵列是使用薄基技术制造的。每个光电二极管阵列由通过Be〜+-注入形成的288x384和128x128元素的p + -on-n二极管组成。二极管的典型零偏置电阻为0.5GΩ。使用具有两个输出的p-MOS滚动读出集成电路（ROIC）。集成式杜瓦瓶组件类型的集成式斯特林用于冷却FPA。红外焦平面阵列在2·10〜（-3）s的存储时间内具有典型的噪声等效功率（6/8）10〜（-13）W /像素。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.91-97|共7页
会议地点 Moscow(RU)
作者
V.M. Akimov; V.F. Chishko; A.I. Dirochka; I.L. Kasatkin; Ye.A. Klimanov; N.V. Kravtchenko; A.A. Lopukhin; V.F. Pasekov;
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State Scientific Center "RDP Center "Orion", Moscow, Russia;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
mid-wavelength infrared; hybrid technology; InSb photodiode; multiplexer; focal plane array (FPA);

机译：中波长红外混合技术InSb光电二极管复用器焦平面阵列（FPA）;

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2. Effects of finite-range interactions on the one-electron spectral properties of one-dimensional metals: Application to Bi/InSb(001) [J] . Carmelo Jose M. P., Cadez Tilen, Ohtsubo Yoshiyuki, Physical review . 2019,第3期

机译：有限范围相互作用对一维金属一电子光谱性质的影响：Bi / InSb（001）的应用
3. Effects of finite-range interactions on the one-electron spectral properties of one-dimensional metals: Application to Bi/InSb(001) [J] . Carmelo Jose M. P., Cadez Tilen, Ohtsubo Yoshiyuki, Physical review . 2019,第3期

机译：有限范围相互作用对一维金属的单电子光谱特性的影响：对BI / INS的应用（001）
4. 128x128 and 288x384 InSb array photodetective assemblies for 3/5 μm spectral range [C] . V.M. Akimov, V.F. Chishko, A.I. Dirochka, International conference on photoelectronics and night vision devices . 2003

机译：128x128和288x384 INSB阵列光电探测组件为3/5μm光谱范围
5. Development of Type-I Gallium Antimonide-based Diode Lasers and Arrays Operating within Spectral Range above 2 microns. [D] . Chen, Jianfeng. 2011

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7. An all-digital, time-gated 128X128 spad array for on-chip, filter-less fluorescence detection [O] . Y. Maruyama, E. Charbon 2011

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8. 15m 128x128 Quantum Well Infrared Photodetector Focal Plane Array Camera [R] . Gunapala, S. D. 1995

机译：15m 128x128量子阱红外光电探测器焦平面阵列相机

128x128 and 288x384 InSb array photodetective assemblies for 3/5 μm spectral range

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