Femto-attosecond photoelectronic imaging (the present state of the art and new trends)

机译：飞秒飞秒光电成像（当前技术水平和新趋势）

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Basic advantages and limitations of ultrafast photoelectronic imaging are overviewed. Presented are recent experimental results on recording of Ti: sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of ultrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100kV/mm) electrical field strength nearby the photocathode surface, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.

机译：概述了超快速光电成像的基本优点和局限性。呈现的是记录Ti：蓝宝石激光辐射的最新实验结果，时间分辨率为200 fs，空间分辨率为30行对/ mm。简短地提到了以飞秒精度将超快光学事件显示在光电阴极上的一些特性。特别强调在光电阴极表面附近产生超高（10-100kV / mm）的电场强度，以及制造各种类型的飞秒图像转换器管。为了打破飞秒的障碍，提出了一种在准静态电磁场中产生数十keV电子的阿秒束的新技术。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.13-20|共8页
会议地点 Moscow(RU)
作者
M. Ya. Schelev;
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作者单位

Photoelectronics Department, General Physics Institute, Russian Academy of Sciences, 38 Vavilov str., Moscow 119991, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
femto-attosecond photoelectronics; femtosecond lasers; attosecond photoelectron bunches;

机译：飞秒光电子学;飞秒激光;亚秒光电子束;

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Femto-attosecond photoelectronic imaging (the present state of the art and new trends)

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