• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >The Integral Function Method: A New Method to Determine the Non-linear Harmonic Distortion
【24h】

The Integral Function Method: A New Method to Determine the Non-linear Harmonic Distortion

机译：积分函数法：一种确定非线性谐波失真的新方法

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The analysis of harmonic distortion is of prime importance for analog and mixed integrated circuits, where MOSFET transistors can be used either as linear resistor in mixers and filters or in the saturation regime in transconductance amplifiers. The determination of the nonlinear harmonic distortion is normally done analytically by the Fourier Methods. Recently we presented a completely new method, which we called Integral Function Method (IFM) that allows the analysis of the harmonic distortion through the calculation of THD, HD2 and HD3. IFM requires the knowledge of the DC transfer characteristic of the device or circuit under study. The IFM combines simplicity and computer efficiency with accuracy. In this work we resume the basic definitions and expressions used by IFM for the harmonic analysis, and present its possibilities when applied to the following types of DC input-output transfer characteristics: long channel SOI MOSFET as linear resistor; short channel SOI MOSFET in the saturation region; short channel SOI MOSFET in saturation at high frequencies; voltage amplifier and differential amplifier. The behavior of these characteristics covers a very wide application spectrum. In all cases results obtained by IFM are compared with results obtained using the calculation of the Fourier coefficients (FC), AC measurements or by FFT in simulation.
机译：谐波失真的分析对于模拟和混合集成电路至关重要，在这种情况下，MOSFET晶体管既可以用作混频器和滤波器中的线性电阻，又可以用作跨导放大器中的饱和状态。非线性谐波失真的确定通常通过傅立叶方法进行分析。最近，我们提出了一种全新的方法，称为积分函数方法（IFM），该方法可以通过计算THD，HD2和HD3来分析谐波失真。 IFM需要了解所研究设备或电路的直流传输特性。 IFM将简单性和计算机效率与准确性结合在一起。在这项工作中，我们恢复了IFM用于谐波分析的基本定义和表达式，并提出了将其应用于以下类型的DC输入输出传递特性的可能性：长通道SOI MOSFET作为线性电阻；饱和区中的短沟道SOI MOSFET;高频下处于饱和状态的短通道SOI MOSFET;电压放大器和差分放大器。这些特性的行为涵盖了非常广泛的应用范围。在所有情况下，都将通过IFM获得的结果与通过傅立叶系数（FC）的计算，交流测量或仿真中的FFT获得的结果进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号