SILICON CARBIDE CLUSTERS IN SILICON FORMED BY CARBON IONS IMPLANTATION

机译：碳离子注入法形成的硅碳化硅团簇

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Silicon carbide clusters are synthesized by low dose carbon implantation into a silicon matrix. The evolution of the silicon carbon chemical bonding is investigated as a function of post-implantation annealing, by FTIR. The formation of SiC crystallites is characterized by SEM and XRD. The FTIR studies show the formation of SiC crystallites in silicon substrates implanted with carbon ions, after appropriated annealing. The SEM observations reveal SiC clusters at the surface with clusters size between 38-192nm. The XRD analysis shows that low dose carbon implantation into silicon through a SiO_2 capping layer, leads to the formation of β-SiC crystallites clustering near the surface, after annealing at 1200℃. Sample annealed at 1100℃ is composed of different SiC polytype. β-SiC crystallites were not evident in samples directly implanted into silicon without any SiO_2 capping layer, for any of the annealing temperatures tested.

机译：碳化硅团簇是通过低剂量碳注入到硅基体中合成的。通过FTIR研究了硅碳化学键的演变与注入后退火的关系。 SiC微晶的形成通过SEM和XRD表征。 FTIR研究表明，经过适当的退火处理后，在注入了碳离子的硅衬底中形成了SiC微晶。 SEM观察结果表明，表面SiC团簇尺寸在38-192nm之间。 X射线衍射分析表明，在1200℃退火后，通过SiO_2覆盖层向硅中低剂量注入碳会导致在表面附近聚集的β-SiC微晶形成。 1100℃退火的样品由不同的SiC多型组成。对于任何测试的退火温度，在没有任何SiO_2覆盖层的情况下直接植入硅中的样品中，β-SiC晶体均不明显。

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《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.275-283|共9页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
N. A. E. Forhan; I. Pereyra;
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作者单位

Escola Politecnica da Universidade de Sao Paulo -PEE -LME Av. Prof. Luciano Gualberto, 158, Trav. 3 -CEP05508-900 Sao Paulo -SP -Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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SILICON CARBIDE CLUSTERS IN SILICON FORMED BY CARBON IONS IMPLANTATION

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