P-8: An Enhanced Gray-Scale Addressing Technique for Digital-Input AMLCD on Planarized Silicon Substrate

机译：P-8：用于平面硅衬底上的数字输入AMLCD的增强型灰度寻址技术

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An addressing technique which can enhance gray scale of digital-input AMLCD is described. The technique utilizes multiple fields per frame, synchronous field voltages and weighted field time to increase number of gray levels limited by the integrated digital data driver. Advantages and disadvantages of the technique are discussed, and experimental results are presented.

机译：描述了一种可以增强数字输入AMLCD灰度的寻址技术。该技术每帧利用多个场，同步场电压和加权场时间来增加受集成数字数据驱动器限制的灰度级数量。讨论了该技术的优缺点，并给出了实验结果。

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来源
《1997 SID international symposium : Digest of technical papers》|1997年|489-492|共4页
会议地点 Boston MA(US)
作者
H. C. Huang; P. W. Cheng; H. S. Kwok;
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作者单位

The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong;

The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong;

The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong;

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正文语种 eng
中图分类照相设备与复制设备;
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专利

1. Thin-film-transistor- and diode-addressed AMLCDs on polymer substrates [J] . N. D. Young, R. M. Bunn, R. W. Wilks, Journal of the Society for Information Display . 1997,第3期

机译：聚合物基板上的薄膜晶体管和二极管寻址AMLCD
2. Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates [J] . Leitz CW, Vineis CJ, Carlin J, Thin Solid Films . 2006,第1a2期

机译：平面应变硅锗虚拟衬底上的应变硅薄膜的直接长生
3. A novel trench planarization technique using polysilicon refill, polysilicon oxidation, and oxide etchback [J] . Shenai K. IEEE Transactions on Electron Devices . 1993,第2期

机译：使用多晶硅填充，多晶硅氧化和氧化物回蚀的新型沟槽平面化技术
4. P-8: An Enhanced Gray-Scale Addressing Technique for Digital-Input AMLCD on Planarized Silicon Substrate [C] . SID international symposium . 1997

机译：P-8：平面化硅衬底上的数字输入AMLCD增强灰度寻址技术
5. Gate-planarized and aluminum-gate fully self-aligned amorphous silicon thin-film transistors for large-area and high-resolution active matrix liquid crystal displays (AMLCDs). [D] . Kim, Joohan. 2000

机译：栅极平面化和铝栅极完全自对准的非晶硅薄膜晶体管，用于大面积和高分辨率有源矩阵液晶显示器（AMLCD）。
6. Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique [O] . Ludovic Dupré, Thérèse Gorisse, Angélique Letrouit Lebranchu, 2013

机译：使用自底向上技术的超致密且平面化的抗反射垂直硅纳米线阵列
7. Planarization of Surface of Aluminium Nitride Substrate with Thin Silicon Oxide Film [O] . Yuji NAGAI 1996

机译：用薄氧化硅膜的氮化铝基板表面的平坦化
8. Planarization techniques for MEMS: enabling new structures and enhancing manufacturability [R] . Smith, J. H. 1996

机译：mEms的平面化技术：实现新结构并提高可制造性

P-8: An Enhanced Gray-Scale Addressing Technique for Digital-Input AMLCD on Planarized Silicon Substrate

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