• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>1998 National Academy of Engineering Fourth Annual Symposium on Frontiers of Engineering, September 17-19, 1998 >Design, synthesis, development, and integration into manufacturing of new polymer materials architectures for advanced integrated circuit fabrication
【24h】

Design, synthesis, development, and integration into manufacturing of new polymer materials architectures for advanced integrated circuit fabrication

机译：设计，合成，开发和集成到用于先进集成电路制造的新型聚合物材料架构中

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Invention of the point contact transistor in 1947 heralded the dawn of the microelectronics era, which has had impacts on every aspect of our lives. Much of the tremendous progress in integrated circuit (IC) technology, performance, and functionality in the past 30 years has been fueled by advances in lithographic technology. The ability to pack an ever-increasing number of individual circuit elements into a device has enabled faster devices, higher densities, and lowerpower dissipation in complementary metal-oxide-silicon (CMOS) circuits. Device complexity and functionality have increased, while minimum feature size has dramatically decreased (see Figure 1), resulting in unprecedented productivity gains in the integrated circuit industry (Moore, 1995). This very steep performance curve historically improved cost per function of integrated circuits by 30 percent per year over this period. Roughly half of the productivity gains are a direct result of fundamental and incremental advances in lithography technology.
机译：1947年点接触晶体管的发明预示着微电子时代的到来，它已经影响到我们生活的方方面面。光刻技术的进步推动了过去30年集成电路（IC）技术，性能和功能的巨大进步。将越来越多的单个电路元件封装到设备中的能力使互补金属氧化物硅（CMOS）电路中的设备速度更快，密度更高且功耗更低。设备的复杂性和功能增加了，而最​​小特征尺寸却大大减小了（见图1），从而导致了集成电路行业前所未有的生产率提高（Moore，1995）。从历史上看，这段非常陡峭的性能曲线在此期间每年将集成电路的每功能成本降低了30％。大约一半的生产率提高是光刻技术的基础和增量进步的直接结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号