GaN PHASE FORMATION IN THE HIGH DOSE N-ION IMPLANTED GaP SUBSTRATE

机译：高剂量N离子注入GaP基体中的GaN相形成

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α -GaN phase (wurtzite) was synthesized in GaP (100) by 140 keV N_2~+ ion implantation at 400 ℃ and subsequent furnace annealing (FA) at 950-1000 ℃ for 20 min or rapid thermal annealing (RTA) at 1000 ℃ for 15 sec. N fluence used in the present study was 3.0 X 10~(17) cm~(-2). From X-ray diffraction analysis, the traces of wurtzite-GaN were recognized. Raman spectra were observed at around 525 cm~(-1) together with LO- and TO-phonons from the GaP matrix, indicating the presence of an A_1(TO) mode in GaN. The formation of micro-crystalline GaN of ～1000A in size was confirmed by Auger electron spectroscopy and Transmission electron microscopy analyses. Some diffraction spots from α-GaN were also observed by electron diffraction.

机译：通过在400℃下注入140 keV N_2〜+离子，然后在950-1000℃下进行20分钟的炉内退火（FA）或在1000℃下进行快速热退火（RTA），在GaP（100）中合成α-GaN相（纤锌矿）。持续15秒。本研究中使用的氮通量为3.0 X 10〜（17）cm〜（-2）。通过X射线衍射分析，可以确认纤锌矿型GaN的痕迹。在约525 cm〜（-1）处观察到拉曼光谱，以及来自GaP矩阵的LO-和TO-声子，表明GaN中存在A_1（TO）模式。通过俄歇电子能谱和透射电子显微镜分析证实了〜1000A的微晶GaN的形成。通过电子衍射还观察到一些来自α-GaN的衍射点。

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来源
《19th Symposium on "Materials Science and Engineering", Dec 13-14, 2000, Koganei Campus of Hosei University》|2000年|p.99-102|共4页
会议地点 Koganei(JP)
作者
H. Kondo; K. Kuriyama; N. Hayashi; M. Ogura; M. Hasegawa; N. Kobayashi; Yukimi Takahashi; S. Watanabe;
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作者单位

College of Engineering and Research Center of Ion Beam Technology Hosei University, Koganei, Tokyo 184-8584, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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GaN PHASE FORMATION IN THE HIGH DOSE N-ION IMPLANTED GaP SUBSTRATE

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