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首页> 外文会议>19th Symposium on "Materials Science and Engineering", Dec 13-14, 2000, Koganei Campus of Hosei University >Gettering to Nanocavities in Silicon: Characterization by Neutron Activation Analysis
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Gettering to Nanocavities in Silicon: Characterization by Neutron Activation Analysis

机译：吸收硅中的纳米腔：通过中子活化分析表征

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摘要

Gettering of impurity Cu atoms to hydrogen-induced nanocavities in Si was characterized by neutron activation analysis. Cavities were formed by H implantation to a dose of 3x10~(16) cm~(-2) at 50-100 keV, followed by annealing at 950 ℃ for 1h. Low concentrations (～10~(12) cm~(-2)) of Cu unintentionally introduced from a quartz-tube furnace were successfully trapped at the cavities. After the etching of a cavity band, the amount of Cu in the sample decreased to the detection limit of the neutron activation analysis. The result shows that almost 100% of contamination Cu atoms can be removed by etching the cavity band after the gettering.
机译：通过中子活化分析表征了杂质Cu原子在Si中氢诱导的纳米腔中的吸杂。通过在50-100 keV下H注入3x10〜（16）cm〜（-2）的剂量形成腔，然后在950℃退火1h。从石英管炉中无意引入的低浓度（〜10〜（12）cm〜（-2））的铜被成功地捕获在型腔中。刻蚀腔带后，样品中的铜含量降低到中子活化分析的检测极限。结果表明，吸气后通过蚀刻腔带可以去除几乎100％的污染Cu原子。

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