Reflect Type DC-20GHz MMIC High Performance Spst and Spdt Switches

机译：反射型DC-20GHz MMIC高性能Spst和Spdt开关

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Design, fabrication, and performance of high performance reflect type DC-20GHz single-pole single-throw(SPST) and single-pole double-throw (SPDT) MMIC switches are described in this paper. Low insertion loss(<=2.5dB), low input/output VSWR(<=1.4), and high isolation(>=47dB) over DC to 20GHz band are exhibited. SPST switch's chip size is 2.6mmX1.1mmX0.1mm, and SPDT switch's chip size is 3.5mmX1.3mmX0.1mm. These chips were fabricated by ion implanted MMIC process and PCM technology to ensure a high yield and good uniformity between wafers and chips.

机译：本文介绍了高性能反射型DC-20GHz单刀单掷（SPST）和单刀双掷（SPDT）MMIC开关的设计，制造和性能。在直流至20GHz频段上表现出低插入损耗（<= 2.5dB），低输入/输出VSWR（<= 1.4）和高隔离（> = 47dB）。 SPST开关的芯片尺寸为2.6mmX1.1mmX0.1mm，SPDT开关的芯片尺寸为3.5mmX1.3mmX0.1mm。这些芯片通过离子注入MMIC工艺和PCM技术制造，以确保高产量和晶圆与芯片之间的良好均匀性。

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来源
《2000 2~nd International Conference on Microwave and Millimeter Wave Technology September 14-16, 2000, Beijing, China》|2000年|p.211-214|共4页
会议地点 Beijing(CN);Beijing(CN)
作者
Dai Yongshent; Chen Xiaojian; Chen Tangsheng; Yang Lijie; Liu Lin; Gao Shuping; Li Hui Lin Jinting;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. Epitaxial Layer Design for High Performance GaAs pHEMT SPDT MMIC Switches [J] . Jung-Hun Oh, Jae Kyoung Mun, Jin-Koo Rhee, ETRI journal . 2009,第3期

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3. 140–220 GHz SPST and SPDT Switches in 45 nm CMOS SOI [J] . Uzunkol M., Rebeiz G. M. Microwave and Wireless Components Letters, IEEE . 2012,第8期

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4. Reflect Type DC-20GHz MMIC High Performance Spst and Spdt Switches [C] . Dai Yongshent, Chen Xiaojian, Chen Tangsheng, International conference on microwave and millmeter wave technology . 2000

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Reflect Type DC-20GHz MMIC High Performance Spst and Spdt Switches

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