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首页> 外文会议>2000 2~nd International Conference on Microwave and Millimeter Wave Technology September 14-16, 2000, Beijing, China >Low Noise PHEMT and its MMIC LNA Implementation for C-band Applications
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Low Noise PHEMT and its MMIC LNA Implementation for C-band Applications

机译：适用于C频段应用的低噪声PHEMT及其MMIC LNA实现

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摘要

We have designed and fabricated an MMIC low noise amplifier for 6 GHz band applications using 0.25 mum gate length AlGaAs/GaAs pseudomorphic high electron mobility transitors. The two-stage LNA is designed to meet the noise requeirements for high data rate C-band wireless LAN, DSRC, and multi-purpose ISM band applications. The input stage was designed to provide a simultaneous noise and impedance match by adjusting both gate width and series feedback inductance at the source, and the inter-stage and the output stage were matched to 50 OMEGA. The on-chip matched LNA shows noise figure less than 0.88 dB, gain greater than 16 dB, and return loss less than -dB at 6 GHz range.
机译：我们已经设计和制造了一种MMIC低噪声放大器，该器件使用0.25微米栅极长度的AlGaAs / GaAs伪晶形高电子迁移率传输器，用于6 GHz频段应用。两级LNA旨在满足高数据速率C波段无线LAN，DSRC和多功能ISM波段应用的噪声要求。通过调整源极的栅极宽度和串联反馈电感，输入级被设计为同时提供噪声和阻抗匹配，并且级间和输出级均匹配至50 OMEGA。片上匹配的LNA在6 GHz范围内的噪声系数小于0.88 dB，增益大于16 dB，回波损耗小于-dB。

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