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首页> 外文会议>The 2001 ASME International Mechanical Engineering Congress and Exposition, 2001, Nov 11-16, 2001, New York, New York >NUMERICAL SIMULATION OF RF HEATING FOR ASIC VAPOR GROWTH SYSTEM
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NUMERICAL SIMULATION OF RF HEATING FOR ASIC VAPOR GROWTH SYSTEM

机译：ASIC蒸气生长系统射频加热的数值模拟

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摘要

A numerical model has been developed to calculate the magnetic potential and temperature distribution in a RF heating system used for a SiC vapor growth system. The magnetic vector potential is calculated by solving the Maxwell equations. The heating power generated in the graphite susceptor is obtained using the Joules law. The temperature profile in a growth chamber is then calculated by solving the energy transport equation with induction heat as a source term. Two sets of grid system have been used to speed up the calculation. The frequency of RF heating and coil current are found to have significant impact on heat generation and its distribution in the graphite susceptor. The maximum temperature in the crucible has a linear relationship with the input power; however, the power input does not influence significantly the temperature gradient. To optimize the heating system for a SiC vapor growth system, the current, frequency, and geometry need to be carefully designed.
机译：已经开发了用于计算用于SiC蒸气生长系统的RF加热系统中的磁势和温度分布的数值模型。磁矢量电势通过求解麦克斯韦方程组来计算。使用焦耳定律获得在石墨基座中产生的加热功率。然后通过以感应热为源项求解能量传输方程来计算生长室中的温度曲线。两组网格系统已被用来加快计算速度。发现射频加热的频率和线圈电流对热量的产生及其在石墨基座中的分布有重大影响。坩埚中的最高温度与输入功率成线性关系。但是，功率输入不会显着影响温度梯度。为了优化SiC蒸气生长系统的加热系统，需要仔细设计电流，频率和几何形状。

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