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首页> 外文会议>The 2001 ASME International Mechanical Engineering Congress and Exposition, 2001, Nov 11-16, 2001, New York, New York >IMPACT OF DIE ATTACH MATERIAL AND SUBSTRATE DESIGN ON RF GaAs POWER AMPLIFIER DEVICES THERMAL PERFORMANCE
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IMPACT OF DIE ATTACH MATERIAL AND SUBSTRATE DESIGN ON RF GaAs POWER AMPLIFIER DEVICES THERMAL PERFORMANCE

机译：芯片附件材料和基板设计对RF GaAs功率放大器的热性能的影响

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摘要

The latest commercial applications for microelectronics use GaAs material for RF Power Amplifier devices. This leads to the necessity of identifying low cost packaging solutions with high standards for reliability, electrical and thermal performance. A detailed thermal analysis for the wirebonded GaAs devices is performed using numerical simulations. The main interest of the study focuses on the impact of die attach thermal conductivity (1.0 to 7.0 W/mK), substrate's top metal layer thickness (25 to 50 μm), and via wall thickness (25 to 50 μm) on GaAs IC device overall thermal performance. The study uses a 2-layer organic substrate; the die attach thickness is 15μm. The peak temperatures reached by PA stages range from 102.7℃ to 113.5℃, below the prohibitive/critical value of 150℃ (based on 85℃ ambient temperature). The increase of die attach thermal conductivity (3 times) led to a slight decrease in peak temperatures (up to 5℃) and the decay is much larger between the cases with 1 and 2.4 W/mK. The largest temperature differences were obtained by varying the thermal via thickness, as opposed to only increasing the top metal layer thickness. The peak temperatures and corresponding junction to ambient thermal resistances are documented. It is determined that for the same die attach thickness, for a thermal conductivity larger than 7 W/mK, the impact on the PA's peak temperature is insignificant.
机译：微电子的最新商业应用将GaAs材料用于RF功率放大器设备。这导致需要确定具有高标准的可靠性，电气和热性能的低成本包装解决方案。使用数值模拟对键合GaAs器件进行了详细的热分析。该研究的主要兴趣集中在GaAs IC器件上的芯片连接导热率（1.0至7.0 W / mK），衬底的顶层金属层厚度（25至50μm）和通孔壁厚（25至50μm）的影响上整体热性能。该研究使用了2层有机底物。芯片贴装厚度为15μm。 PA级达到的峰值温度在102.7℃至113.5℃之间，低于150℃的禁止/临界值（基于85℃的环境温度）。贴片导热率的增加（3倍）导致峰值温度略有下降（最高5℃），并且在1和2.4 W / mK的情况下，衰减更大。与仅增加顶部金属层的厚度相反，通过改变热通孔的厚度可获得最大的温差。记录了峰值温度和相应的结点到环境热阻。已确定，对于相同的芯片贴装厚度，对于大于7 W / mK的导热系数，对PA峰值温度的影响不明显。

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