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首页> 外文会议>2002 ASME International Mechanical Engineering Congress and Exposition , Nov 17-22, 2002, New Orleans, Louisiana >NUMERICAL MODELING OF Si_(0.15)Ge_(0.85) BY THE TRAVELING SOLVENT METHOD
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NUMERICAL MODELING OF Si_(0.15)Ge_(0.85) BY THE TRAVELING SOLVENT METHOD

机译：Si_（0.15）Ge_（0.85）的行进溶剂法数值模拟

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摘要

The traveling solvent method (TSM) is a relatively new and promising technique for the production of high quality semiconductors. TSM has been tested on many alloys producing pure and homogeneous crystals. In the present study the effect of buoyancy convection on the growth of the Sio_(0.15)Ge_(0.85) crystal grown by the traveling solvent method is investigated under different heating conditions. The full Navier-Stokes equations together with the energy and solutal equations were solved numerically using the finite element technique. The model take into consideration the losses of heat by radiation and the use of the phase diagram to determine the silicon concentration at the growth interface. Results revealed a strong convection in the solvent, which in turn is detrimental to the growth uniformity in the crystal rod. Additional numerical results showed that the convective heat transfer significantly influences the solute distribution in the liquid zone and the growth rate increases substantially.
机译：移动溶剂法（TSM）是一种用于生产高质量半导体的相对较新的有前途的技术。 TSM已在生产纯净和均质晶体的许多合金上进行了测试。在本研究中，研究了浮力对流对在不同加热条件下通过行进溶剂法生长的Sio_（0.15）Ge_（0.85）晶体生长的影响。使用有限元技术对完整的Navier-Stokes方程以及能量方程和溶液方程进行了数值求解。该模型考虑了辐射造成的热量损失以及使用相图确定生长界面处的硅浓度。结果显示溶剂中有很强的对流，这又不利于晶体棒中的生长均匀性。附加的数值结果表明，对流换热显着影响了液相中的溶质分布，并且增长率大大提高。

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