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首页> 外文会议>2002 ASME International Mechanical Engineering Congress and Exposition , Nov 17-22, 2002, New Orleans, Louisiana >MINIATURIZED THERMOELECTRIC COOLER
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MINIATURIZED THERMOELECTRIC COOLER

机译：微型热电冷却器

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Vapor-deposited bismuth telluride (n-type) and antimony telluride (p-type) films are used in a micro, column-type, patterned thermoelectric cooler. The optimum number of thermoelectric pairs and operating current are predicted. Such devices contain a number of metal/thermoelectric and metal/elecrical-insulator interfaces. In the analysis, various interfacial resistances (phonon and electron boundary resistances and thermal and electrical contact resistances) have been included. The boundary resistances cause a reduction in the thermal conductivity (desirable) and a reduction in the Seebeck coefficient (undesirable) of the thermoelectric elements. The contact resistances reduce the overall device performance. In the fabrication, the stoichiometry of the deposited thermoelectric films, the patterned film deposition, and the selection of the conducting connectors, are discussed. The thermoelectric films are about 4 μm thick and are deposited on patterned platinum (first trial layer for connectors), which are in turn deposited on oxide coated silicon wafers. The top, suspended connectors that close the electrical circuit are bonded to the surface to be cooled. The non-uniformity of the composition in the thermoelectric films influences the measured Seebeck coefficients. The analysis shows that a coefficient of performance of 0.38 is obtainable for a wireless micro sensor application.
机译：气相沉积的碲化铋（n型）和碲化锑（p型）薄膜用于微型，柱型，图案化的热电冷却器中。预测了最佳的热电对数量和工作电流。这样的设备包含许多金属/热电和金属/电绝缘体接口。在分析中，已包括各种界面电阻（声子和电子边界电阻以及热和电接触电阻）。边界电阻引起热电元件的热导率的降低（期望的）和塞贝克系数的降低（不期望的）。接触电阻会降低整个设备的性能。在制造中，讨论了沉积的热电薄膜的化学计量，图案化的薄膜沉积以及导电连接器的选择。所述热电膜厚约4μm，并沉积在图案化的铂（用于连接器的第一试验层）上，该铂又沉积在氧化物涂覆的硅晶片上。闭合电路的顶部悬挂式连接器连接到要冷却的表面。热电薄膜中成分的不均匀性会影响测得的塞贝克系数。分析表明，对于无线微传感器应用而言，可以获得0.38的性能系数。

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