Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

机译：漏极宽度对AlGaN / GaN / SiC HEMT中深缺陷电学行为的影响

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The transient behaviors of AlGaN/GaN HEMTs were studied by conductance deep level transient spectroscopy. Deep levels in HEMTs are known to be responsible for trapping processes like: kink effect and degradation in saturation current. Three electron traps were observed. An additional “hole-like” level with activation energy of 0.43 eV is obtained. They were attributed these levels with surface states.

机译：通过电导深能级瞬态光谱研究了AlGaN / GaN HEMT的瞬态行为。众所周知，HEMT中的深层负责陷获过程，例如：扭结效应和饱和电流降低。观察到三个电子陷阱。获得具有0.43 eV激活能的附加“孔状”能级。他们将这些水平归因于表面状态。

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来源
《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.479-481|共3页
会议地点 Nis(RS);Nis(RS)
作者
Fathallah O.; Gassoumi M.; Saadaoui S.; Grimbert B.; Gaquiere C.; Maaref H.;
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作者单位

Laboratoire de Physique des Semiconducteurs et des Composants Electroniques FacultÃÂ©ÃÂ¿ des Sciences de Monastir, Avenue de l'environnement 5000 Monastir, Tunisia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微模组件;
关键词
AlGaN/GaN; CDLTS; Surface traps;

机译：AlGaN / GaN; CDLTS;表面陷阱;

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专利

1. The Effect of Defects with Deep Levels on the C-V Characteristics of High-Power AlGaN/GaN/SiC HEMTs [J] . K. L. Enisherlova, Yu. V. Kolkovskii, E. A. Bobrova, Russian Microelectronics . 2019,第1期

机译：深度水平对高功率AlGaN / GaN / SiC HEMTS的C-V特性的缺陷的影响
2. Review-Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT [J] . Wilson Marshall, Findlay Andrew, Savtchouk Alexandre, ECS Journal of Solid State Science and Technology . 2017,第11期

机译：审查 - SiC，GaN和AlGaN / GaN Hemt的充电和照片辅助非接触电气表征的最新进展
3. Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates [J] . Cordier Y, Hugues M, Semond F, Journal of Crystal Growth . 2005,第1a4期

机译：MBE在SiC，Si（111）和GaN模板上通过MBE生长的AlGaN / GaN HEMT的结构和电性能
4. Effects of the Drain Width on the Electrical Behavior of Deep Defect in AlGaN/GaN/SiC HEMTs [C] . O. Fathallah, M. Gassoumi, S. Saadaoui, International Conference on Microelectronics . 2010

机译：排水宽度对AlGaN / GaN / SiC HEMTS在深缺陷电气行为的影响
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate [O] . Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, 2020

机译：凹入式栅极结构对具有薄AlOxNy MIS栅极的AlGaN / GaN-on-SiC MIS-HEMT的影响
7. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization [O] . Jean-guy Tartarin, Geoffroy Soubercaze-pun, Jean-laurent Grondin, 2015

机译：通过低频噪声测量和sIms表征证明siC衬底上alGaN / GaN HEmT的生成 - 复合缺陷

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

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