Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

机译：考虑到读写辅助电路的基于FinFET的SRAM中的静态读取稳定性和写入能力指标

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This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.

机译：本文不仅针对基本位单元，而且还针对具有读写辅助电路的位单元，评估了SRAM的读取稳定性和写入能力指标。某些度量标准不能用于正确估计产量，并且分析了原因。根据分析结果，我们建议采用读写度量标准，而无论辅助电路如何，都可以正确估计产量。

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来源
《2012 19th IEEE International Conference on Electronics, Circuits and Systems.》|2012年|p.833-836|共4页
会议地点 Seville(ES);Seville(ES)
作者
Jeong Hanwool; Yang Younghwi; Lee Junha; Kim Jisu; Jung Seong-Ook;
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作者单位

School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
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专利

1. An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage [J] . Harold Pilo, Charlie Barwin, Geordie Braceras, IEEE Journal of Solid-State Circuits . 2007,第期

机译：65纳米技术节点中的SRAM设计，具有读取和写入辅助电路以扩展工作电压
2. An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage [J] . Pilo H., Barwin C., Braceras G., IEEE Journal of Solid-State Circuits . 2007,第4期

机译：65纳米技术节点中的SRAM设计，具有读取和写入辅助电路以扩展工作电压
3. Analysis of Read-stability and Write-ability in FinFET SRAM cells [J] . Ashish Kumar Sharma, Nikhil Saxena International Journal of Engineering Trends and Technology . 2017,第1期

机译：FinFET SRAM单元的读取稳定性和可写入性分析
4. Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells [C] . Hu Vita Pi-Ho, Fan Ming-Long, Su Pin, IEEE International Symposium on Circuits and Systems . 2014

机译：评估GeOI FinFET 6T SRAM单元的读写辅助电路
5. FinFET-based SRAM and Monolithic 3-D Integrated Circuit Design [D] . Guler, Abdullah. 2019

机译：基于FinFET的SRAM和单片3-D集成电路设计
6. Highly-stable write-once-read-many-times switching behaviors of 1D–1R memristive devices based on graphene quantum dot nanocomposites [O] . Sihyun Sung, Chaoxing Wu, Hyun Soo Jung, -1

机译：基于石墨烯量子点纳米复合材料的一维至一维忆阻器件高度稳定的一次写入多次读取切换行为
7. A Dual Port 8T SRAM Cell Using FinFET CMOS Logic for Leakage Reduction and Enhanced Read Write Stability [O] . Chusen Duari, Shilpi Birla, Amit Kumar Singh 2020

机译：使用FinFET和CMOS逻辑的双端口8T SRAM单元进行泄漏减少和增强的读写稳定性

Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

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