Critical comparison of carrier lifetime at 1.55 #x00B5;m of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

机译：离子辐照的InGaAs，冷注入的InGaAsP和ErAs：GaAs在1.55 µm载流子寿命的关键比较

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We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (?T) set-up. The InGaAs-based materials show a positive ?T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ?T consistent with a two-photon absorption process.

机译：我们比较了在Br辐照的InGaAs和冷铁注入的InGaAsP中测得的光载流子寿命。我们还证明了ErAs：GaAs中双光子吸收（TPA）过程的可能性。使用基于光纤的1550 nm时间分辨差分传输（ΔT）装置测量寿命和TPA。基于InGaAs的材料显示出亚皮秒寿命的正ΔT，而ErAs：GaAs则显示出与双光子吸收过程一致的负ΔT。

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来源
《International Conference on Infrared, Millimeter, and Terahertz Waves;IRMMW-THz 2012》|2012年|p.1- 2|共2页
会议地点 Wollongong(AU);Wollongong(AU)
作者
Martin M.; Brown E. R.; Mangeney J.; Fekecs A.; Ares R.; Morris D.;
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作者单位

Department of Physics, Wright State University, Dayton, OH, 45435, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电设备、电信设备;无线电设备、电信设备;
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专利

1. Electrical properties of 1.55 /spl mu/m sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime [J] . Mangeney J., Joulaud L., Decobert J., Electronics Letters . 2003,第8期

机译：1.55 / spl mu / m敏感的离子辐照InGaAs的电性能，具有亚皮秒的载流子寿命
2. Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs [J] . Wataru Susaki, Soichro Ukawa, Masashi Tanaka Physica Status Solidi. C, Conferences and critical reviews . 2006,第3期

机译：在GaAs上生长InGaAsP势垒/波导层的压应变InGaAs量子阱激光器的载流子寿命
3. High intrinsic modulation bandwidth InGaAsP/InGaAsP 1.55 μm asymmetric active multimode interferometer laser diode by using split pump configuration [J] . Mohammad Nasir Uddin, Takaaki Kizu, Yasuhiro Hinokuma, Japanese journal of applied physics . 2014,第8S2期

机译：采用分泵配置的高本征调制带宽InGaAsP / InGaAsP 1.55μm非对称有源多模干涉仪激光二极管
4. Critical comparison of carrier lifetime at 1.55 #x00B5;m of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs [C] . Martin M., Brown E. R., Mangeney J., International Conference on Infrared,Millimeter and Terahertz Waves . 2012

机译：载体寿命在1.55μm的离子辐照的Ingaas，冷植入ingaAsp和时代的临界比较：GaAs
5. High-power near-resonant 1.55 micrometer-emitting InGaAsP/InP antiguided diode laser arrays. [D] . Bhattacharya, Arnab. 1997

机译：大功率近谐振1.55微米发射InGaAsP / InP反导二极管激光器阵列。
6. InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band [O] . Hai-Zhi Song, Mukhtar Hadi, Yanzhen Zheng, 2017

机译：用于1.55-μm电信频段的单光子源的InGaAsP / InP纳米腔
7. Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer [O] . Veldhoven, van, PJ René, Chauvin, NJG Nicolas, Fiore, A Andrea, 2009

机译：通过超薄GaAs中间层实现的低密度1.55μmInAs / InGaAsP / InP（100）量子点

Critical comparison of carrier lifetime at 1.55 #x00B5;m of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

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