Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

机译：高薄层电阻均质发射极在带有Cu触点的PERC型太阳能电池的工艺流程中的集成

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This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl3 diffusion or by selectively removing the rear side emitter in an inline 1-sided wet-chemical etching tool after diffusion. A metallization sequence [1,2] applying Ni and Cu plating, is performed to contact the moderately doped emitters. The best experimental split in this comparison resulted in excellent average conversion efficiency of 20.2%.

机译：本文介绍了在镀有Ni-Si / Cu前触点的大面积p型CZ-Si PERC太阳能电池上集成了高薄层电阻（120Ω/ sq）均匀发射极和工业可行工艺流程的结果。重点放在结隔离上，方法是在POCl3扩散之前涂上掩模，或在扩散后通过在线1面湿式化学蚀刻工具有选择地去除背面发射极。进行应用镍和铜电镀的金属化顺序[1,2]，以接触中等掺杂的发射极。在此比较中，最佳的实验拆分产生了20.2％的出色平均转化效率。

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来源
《2012 38th IEEE Photovoltaic Specialists Conference.》|2012年|p.003371- 003376|共6页
会议地点 Austin TX(US)
作者
Ngamo Michel;
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作者单位

TOTAL Gas Power, 2 place Jean Millier - La défense 6, 92078 Paris la défense Cedex, France;

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原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
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4. Integration of High Sheet Resistance Homogeneous Emitters in a Process Flow for PERC-Type Solar Cells with Cu Contacts [C] . Michel Ngamo, Loic Tous, Emanuele Cornagliotti, IEEE Photovoltaic Specialists Conference . 2012

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Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

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