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首页> 外文会议>2012 38th IEEE Photovoltaic Specialists Conference. >Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon
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Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon

机译：利用多晶硅中的晶界对间隙铁的内部吸气进行成像和建模

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摘要

In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.
机译：本文使用一个简单的一维扩散捕获模型，通过两个拟合参数：Fe原子的扩散长度和在晶界处的吸杂速度，来有效地表征多晶硅晶界附近间隙铁浓度的降低。通过在硅中解离FeB对之前和之后拍摄的光致发光图像来实现测量。讨论了横向光子散射和横向载流子扩散的测量伪像。通过在低温下退火的多晶硅晶片验证了该方法和模型，该晶片已知会导致间隙铁内部扩散受限的内部吸杂。

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