Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors

机译：研究基带电存储对功率晶体管动态特性的影响

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The inter-modulation distortion products vary in amplitude and asymmetry due to the effects of baseband and 2^nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variations and looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. Here, the investigations are carried out on 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to quantify the role of baseband impedances on observed hysteresis in the dynamic transfer characteristics. Analysis is performed in envelope domain in order to more effectively reveal the DDT's sensitivity to electrical baseband memory effects.

机译：由于基带和2 ^{谐波阻抗的影响，互调失真产物的幅度和不对称性会发生变化。本文对由基带阻抗变化引起的IMD不对称与环路或磁滞之间的关系进行了研究，当受到调制激励时，环路或磁滞有时会出现在微波功率器件的动态传输特性中。在这里，研究以2.1GHz为特征的2W GaN HFET裸片器件进行了研究，并使用IF有源负载牵引来量化基带阻抗对动态滞回特性中观察到的磁滞的作用。在包络域中进行分析，以便更有效地揭示DDT对电基带存储效应的敏感性。}

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来源
《2013 16th International Multi Topic Conference》|2013年|106-109|共4页
会议地点 Lahore(PK)
作者
Chaudhary M.A.; Memon Z.A.; Lees J.; Benedikt J. more authors;
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作者单位

Dept. of Electr. Eng., Ajman Univ. of Sci. Technol., Ajman, United Arab Emirates;

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原文格式 PDF
正文语种 eng
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关键词
Envelope domain; GaN; IF active load-pull; hysteresis; inter-modulation; memory Effects;

机译：包络区; GaN; IF有源负载牵引;磁滞;互调;记忆效应;;

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2. Sensitivity of electrical baseband memory effects to higher-order IF components for high-power LDMOS power amplifiers [J] . A. Alghanim, J. Lees, T. Williams, Electronics Letters . 2008,第5期

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Investigation of baseband electrical memory effects on the dynamic characteristics of power transistors

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