A 0.4V 790#x03BC;w CMOS low noise amplifier in sub-threshold region at 1.5GHz

机译：一个1.5V亚阈值区域内的0.4V790μwCMOS低噪声放大器

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A fully integrated low-noise amplifier (LNA) with 0.4V supply voltage and ultra low power consumption at 1.5GHz by folded cascode structure is presented. The proposed LNA is designed in a TSMC 0.18 μm CMOS technology, in which all transistors are biased in subthreshold region. Through the use of proposed circuit for gain enhancement in this structure and using forward body bias technique, a very high figure of merit is achieved, in comparison to similar structures. The LNA provides a power gain of 14.7dB with a noise figure of 2.9dB while consuming only 790μW dc power. Also, impedance matching of input and output of the circuit in its operating frequency is desirable and in the whole bandwidth of the circuit, input and output isolation is below -33dB.

机译：通过折叠共源共栅结构，提出了一种具有0.4V电源电压和1.5GHz超低功耗的全集成低噪声放大器（LNA）。拟议的LNA采用TSMC 0.18μmCMOS技术设计，其中所有晶体管都在亚阈值区域内偏置。与类似结构相比，通过在该结构中使用建议的电路来增强增益并使用正向偏置技术，可以获得很高的品质因数。 LNA的功率增益为14.7dB，噪声系数为2.9dB，而仅消耗790μW的直流功率。同样，在其工作频率下电路的输入和输出的阻抗匹配是所希望的，并且在电路的整个带宽中，输入和输出隔离低于-33dB。

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来源
《2013 8th International Design and Test Symposium》|2013年|1-6|共6页
会议地点 Marrekesh(MA)
作者
Zafarian A.; Kalali Fard I.; Golmakani A.; Shirazi J.;
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作者单位

Electr. Eng. Dept., Islamic Azad Univ., Arak, Iranc;

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原文格式 PDF
正文语种 eng
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关键词
Low noise amplifier; folded cascode structure; forward body bias; ultra low power; ultra low voltage;

机译：低噪声放大器；折叠共源共栅结构；正向偏置；超低功耗；超低电压；;

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A 0.4V 790#x03BC;w CMOS low noise amplifier in sub-threshold region at 1.5GHz

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