首页> 外文会议>2013 IEEE 5th International Nanoelectronics Conference. >ZnO nanowires lift-off from silicon substrate embedded in flexible films
【24h】

ZnO nanowires lift-off from silicon substrate embedded in flexible films

机译:ZnO纳米线从嵌入柔性膜中的硅基底剥离

获取原文
获取原文并翻译 | 示例

摘要

A novel lifting-off method of ZnO nanowires from Si substrate and embedded in flexible films have been proposed in this study. Compared with peeling-off method by polydimethyl- siloxane (PDMS), the embedded ZnO nanowires may suffer from external forces to change the dimension. The shape of ZnO nanowires remained almost unchanged after using the novel lifting-off process. Flexible films served as the secondary and flexible substrate after ZnO nanowires transferring from the Si substrate. The lift-off fabrication is a candidate for Si substrate recycling usage and for large area fabrication.
机译:本研究提出了一种新的从硅衬底上剥离并嵌入柔性膜中的ZnO纳米线的方法。与通过聚二甲基硅氧烷(PDMS)剥离的方法相比,嵌入的ZnO纳米线可能会受到外力改变尺寸的影响。使用新颖的剥离工艺后,ZnO纳米线的形状几乎保持不变。在ZnO纳米线从Si衬底转移后,柔性膜充当第二和柔性衬底。剥离制造是用于Si衬底回收利用和大面积制造的候选者。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号