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Temperature stabilized CMOS ring oscillator

机译:温度稳定的CMOS环形振荡器

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摘要

This paper presents a new technique to improve the frequency stability and amplitude stability with respect to temperature of ring oscillator using CMOS technology at 500nm technology using 3 volts supply voltage with 100fF load capacitance. There are several proposed architecture for the improvement in frequency stability and amplitude stability of sinusoidal output waveform. Proposed structure 1 based on addition of feed-forward path increases the frequency stability and amplitude stability whereas the proposed structure 2 based on the addition of feedback path increases the frequency stability and amplitude stability with respect to temperature.
机译:本文提出了一种新技术,该技术可在500nm技术下,使用3伏电源电压和100fF负载电容的情况下,利用CMOS技术提高环形振荡器相对于频率的频率稳定性和幅度稳定性。为了改善正弦输出波形的频率稳定性和幅度稳定性,提出了几种架构。基于前馈路径的增加的所提出的结构1增加了频率稳定性和幅度稳定性,而基于反馈路径的增加的所提出的结构2相对于温度增加了频率稳定性和幅度稳定性。

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