首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >(Ag,Li)NbO3 thin films fabricated on (001), (110), and (111)SrTiO3 substrates by pulsed laser deposition
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(Ag,Li)NbO3 thin films fabricated on (001), (110), and (111)SrTiO3 substrates by pulsed laser deposition

机译:通过脉冲激光沉积在(001),(110)和(111)SrTiO3衬底上制备(Ag,Li)NbO3薄膜

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摘要

001-, 110-, 111-oriented (Ag1−xLix)NbO3 (ALN) films with x=0.05 (ALN05), 0.1 (ALN10), and 0.15 (ALN15) were fabricated on (001), (110) and (111) SrTiO3 (STO) substrates by pulse laser deposition (PLD). The surface texture of the ALN films ware dependent on the crystal orientation of STO substrates. All the ALN films exhibited a ferroelectric behavior. The ALN films with x=0.1 deposited on (111) STO showed the largest remanent polarization of 40µC/cm2.
机译:在(001),(110)和(111)上制作了x = 0.05(ALN05),0.1(ALN10)和0.15(ALN15)的001、110、111取向(Ag1-xLix)NbO3(ALN)膜。 )SrTiO3(STO)基板通过脉冲激光沉积(PLD)。 ALN膜的表面纹理取决于STO基板的晶体取向。所有的ALN膜都表现出铁电行为。在(111)STO上沉积的x = 0.1的ALN膜显示出最大的剩余极化强度40µC / cm 2

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