Realization and characterization of manganese doped BST thin films for reflectarray applications

机译：用于反射阵列应用的锰掺杂BST薄膜的实现与表征

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In the present work, Mn-doped Ba1−xSrxTiO3 (BST) thin films were realized by Chemical Solution Deposition (CSD) on alumina as the foreseen application for a reflect array needs integration of the ferroelectric on an insulating substrate. The optimum dopant rate to be inserted depending on the materials defect density, we have studied BST doping with a manganese content ranging from 0% to 2%. The dielectric and electrical characteristics were investigated as a function of the Mn content in the frequency range of 100 Hz to 5 GHz.

机译：在目前的工作中，通过在氧化铝上的化学溶液沉积（CSD）实现了掺杂Mn的Ba1-xSrxTiO3（BST）薄膜，因为预见的反射阵列应用需要将铁电体集成在绝缘基板上。取决于材料缺陷密度，要插入的最佳掺杂率，我们研究了锰含量为0％至2％的BST掺杂。在100 Hz至5 GHz的频率范围内，研究了介电和电特性随Mn含量的变化。

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《2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy》|2013年|145-148|共4页
会议地点 Prague(CZ)
作者
Nadaud Kevin; Borderon Caroline; Pavy Sabrina; Gundel Hartmut W.;
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Institut d#039;

#x00C9;

lectronique et de T#x00E9;

l#x00E9;

communications de Rennes, University of Nantes, France;

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正文语种 eng
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BST; Mn-doping; ferroelectric; microwave; thin film;

机译：BST;锰掺杂;铁电;微波;薄膜;;

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Realization and characterization of manganese doped BST thin films for reflectarray applications

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