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首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films
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A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films

机译：高k铁电薄膜在微波范围内介电表征的新方法

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摘要

In this paper we propose a new method of dielectric characterization of high-k thin films based on the measurement of coplanar capacitor inserts between two coplanar waveguide transmission lines. The measurement geometry is deposed on the thin film which is elaborate on an insulating substrate. The thin film permittivity is extracted with the help of a mathematical model describing the capacitance between two conductor plates deposed on a 2-layers substrate. A simple correction is proposed in order to enhance the matching between the model and the full wave simulation. The results of the proposed measurement method are compared to those of a classical characterization technique using parallel plate capacitor geometry.
机译：在本文中，我们基于测量两条共面波导传输线之间的共面电容器插入物，提出了一种高介电常数薄膜高介电特性的新方法。将测量几何形状沉积在精心制作的绝缘基板上的薄膜上。借助于描述在两层基板上沉积的两个导体板之间的电容的数学模型来提取薄膜介电常数。为了增强模型与全波仿真之间的匹配，提出了一种简单的校正方法。所提出的测量方法的结果与使用平行板电容器几何形状的经典表征技术的结果进行了比较。

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