Forming a regular domain structures at 127#x00B0; Y#x2032;-cut of a LiTaO3 crystal by using direct e-beam writing

机译：通过直接电子束写入在LiTaO3晶体的127°Y'切割处形成规则的畴结构

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Regular domain structures were formed at the 127° Y′-cut of a LiTaO3 crystal by direct e-beam writing. The study of regular domain structures was carried out by selective chemical etching method and by nonlinear optics methods. The domain lines consists of single triangular domains merged together (base-to-apex). The domain distribution inside the LiTaO3 127° Y′-cut occurs at the angle 37° to the irradiated surface and exhibits a distinct anisotropy in the crystallographic directions. Depending on the direction of e-beam movement along the irradiated surface, the threshold density of the introduced charge necessary for the inversion of the crystal spontaneous polarization changes by an order of magnitude.

机译：通过直接电子束写入，在LiTaO3晶体的127°Y'切口处形成规则的畴结构。通过选择性化学刻蚀方法和非线性光学方法对规则畴结构进行了研究。域线由合并在一起的单个三角形域组成（基到顶点）。 LiTaO3 127°Y'-cut内部的畴分布出现在与辐照表面成37°角的位置，并且在晶体学方向上表现出明显的各向异性。根据电子束沿被照射表面的移动方向，晶体自发极化反转所需的引入电荷的阈值密度会发生一个数量级的变化。

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来源
《2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy》|2013年|17-20|共4页
会议地点 Prague(CZ)
作者
Emelin Evgeny; Roshchupkin Dmitry; Lavrov Sergey; Ilyin Nikita;
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作者单位

Institute of Microelectronics Technology and High-Purity, Materials Russian Academy of Sciences, Chernogolovka, Moscow District, Russia;

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原文格式 PDF
正文语种 eng
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关键词
LiTaO3; direct e-beam writing; regular domain structures; spontaneous polarization;

机译：LiTaO3;直接电子束写入;规则畴结构;自发极化;;

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专利

1. Domain Structure Fabrication in Z and Y-cuts of LiTaO3 Crystals by Point e-beam Writing in the SEM [J] . Ferroelectrics . 2009,第1期

机译：扫描电镜中点电子束在LiTaO3晶体的Z和Y切割中制造畴结构
2. The Possibility of Planar Periodic Domain Structures Engineering on the Y-Cut Surfaces of LiTaO₃ Crystals by E-Beam Point Writing [J] . Ferroelectrics . 2008,第1期

机译：电子束点书写在LiTaO _{3 晶体的Y形切割面上进行平面周期畴结构工程的可能性}
3. The Possibility of Planar Periodic Domain Structures Engineering on the Y-Cut Surfaces of LiTaO_3 Crystals by E-Beam Point Writing [J] . L. S. KOKHANCHIK, D. V. PUNEGOV Ferroelectrics . 2008,第0期

机译：电子束点写法在LiTaO_3晶体的Y形切割面上进行平面周期畴结构工程的可能性
4. Forming a regular domain structures at 127° Y'-cut of a LiTaO_3 crystal by using direct e-beam writing [C] . Evgeny Emelin, Dmitry Roshchupkin, Sergey Lavrov, IEEE International Symposium on Applications of Ferroelectrics . 2013

机译：通过使用直接电子束写入在LiTaO_3晶体的127°Y'切割的常规域结构
5. Direct-write e-beam sub-micron domain engineering in lithium niobate thin films grown by liquid phase epitaxy. [D] . Son, Ji-Won. 2005

机译：通过液相外延生长的铌酸锂薄膜中的直接写入电子束亚微米域工程。
6. All-carbon based graphene field effect transistor with graphitic electrodes fabricated by e-beam direct writing on PMMA [O] . Wei Chen, Yayun Yu, Xiaoming Zheng, -1

机译：在PMMA上通过电子束直接写入制成的具有石墨电极的全碳基石墨烯场效应晶体管
7. FIELD INDUCED EVOLUTION OF REGULAR AND RANDOM 2D DOMAIN STRUCTURES AND SHAPE OF ISOLATED DOMAINS IN LiNbO3 AND LiTaO3 [O] . M. A. Dolbilov, K. Gallo 2015

机译：场诱导LiNbO3和LiTaO3中正定和随机二维域结构的演化和孤立域的形状

Forming a regular domain structures at 127#x00B0; Y#x2032;-cut of a LiTaO3 crystal by using direct e-beam writing

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