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首页> 外文会议>2013 IEEE Nuclear Science Symposium and Medical Imaging Conference >Fisher information analysis of depth-of-interaction estimation in double-sided strip detectors
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Fisher information analysis of depth-of-interaction estimation in double-sided strip detectors

机译：双面条形探测器中相互作用深度估计的Fisher信息分析

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摘要

Electron and holes, produced by the absorption of a gamma-ray photon in the depletion region of a semiconductor detector, drift towards their respective electrodes under the influence of the electric field created by a bias potential difference applied between the contacts. Carrier transport has an important impact on the signals observed with compound semiconductors such as CdTe and CdZnTe, as these materials are known to suffer from non-negligible trapping effects. Trapping causes the carrier-induced charge on the anodes and cathodes to become a function of where the electrons and holes are generated via the gamma-ray interaction in the crystal. The mean drift length of the charge carriers, and thus the significance of the effects of trapping, can be at least partially controlled by changing the magnitude of the applied bias voltage. Selection of operating bias voltage can therefore provide us a means to tune the sensitivity to gamma-ray depth-of-interaction (DOI).
机译：由半导体探测器的耗尽区中的伽马射线光子的吸收产生的电子和空穴，在由触点之间施加的偏置电势差产生的电场的影响下，朝着它们各自的电极漂移。载流子传输对使用化合物半导体（例如CdTe和CdZnTe）观察到的信号具有重要影响，因为已知这些材料会遭受不可忽略的俘获效应。陷阱使阳极和阴极上的载流子感应电荷变成晶体中伽马射线相互作用产生电子和空穴的位置的函数。可以通过改变施加的偏置电压的大小来至少部分地控制电荷载流子的平均漂移长度以及由此产生的俘获效应的重要性。因此，选择工作偏置电压可以为我们提供一种调节对伽玛射线相互作用深度（DOI）的灵敏度的方法。

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