Spectroscopic electrical characterization of post-resistive-transition SiO2 films

机译：电阻转变后SiO 2 薄膜的光谱电学表征

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摘要

This paper demonstrates the electronic structures of SiO2 films in low-resistance state and high-resistance state. The electronic structure is also characterized spectroscopically by means of the current fluctuation.

机译：本文演示了低电阻状态和高电阻状态下SiO2薄膜的电子结构。电子结构还通过电流波动在光谱上表征。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Yamaguchi R.; Sato S.; Omura Y.; Nakamura K.;
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作者单位

Grad. School Sci. and Eng., Kansai University, Suita, Osaka 564-8680, Japan;

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原文格式 PDF
正文语种 eng
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关键词
Educational institutions; Electrodes; Films; Fluctuations; Insulators; Leakage currents; Resistance; Resistive transition; SiOinf2/inf film; current fluctuation; electronic structure;

机译：教育机构;电极;电影；波动；绝缘子漏电流；抵抗性;电阻过渡SiO 2 薄膜;电流波动；电子结构;

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机译：<！[CDATA [SIO x n Y 和SIO 2 介电层和后表面钝化使用SIO 2 / SIO X N Y 堆叠图层，带有C-Si太阳能电池的屏幕印刷本地AL-BSF]]>
2. Magnetoelectric coupling in Tb0.3Dy0.7Fe2/Pt/PbZr0.56Ti0.44O3 thin films deposited on Pt/TiO2/SiO2/Si substrate [J] . Cibert C., Zhu J., Poullain G., Applied Physics Letters . 2013,第2期

机译：Tb 0.3 Dy 0.7 Fe 2 / Pt / PbZr 0.56 Ti 0.44 2 / SiO 2 / Si衬底上沉积> O 3 薄膜
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机译：<！[CDATA [更好地了解SIO 2 ，P 2 O < CE：INF PLACE =“POST”> 5 和AL 2 O 3 在Yb的光谱性质 3 + 掺杂的二氧化硅溶胶 - 凝胶玻璃]]]>
4. Spectroscopic electrical characterization of post-resistive-transition SiOinf2/inf films [C] . Yamaguchi R., Sato S., Omura Y., Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：电阻后转化SiO 2 薄膜的光谱电学特性
5. Spectroscopic, structural, and electrical characterization of thin films vapor-deposited from the spin-crossover complex Fe(phen) 2(NCS)2. [D] . Ellingsworth, Edward Chrisler. 2015

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6. Controlled Biomineralization of Magnetite (Fe(inf3)O(inf4)) and Greigite (Fe(inf3)S(inf4)) in a Magnetotactic Bacterium [O] . D. A. Bazylinski, R. B. Frankel, B. R. Heywood, 1995

机译：趋磁细菌中磁铁矿（Fe（inf3）O（inf4））和钙铁矿（Fe（inf3）S（inf4））的受控生物矿化
7. Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC [O] . Zhang Feng, Zhu Huili, Yang Weifeng, 2008

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8. In situ Infrared Reflection Absorption Spectroscopic Characterization of Plasma Enhanced Chemical Vapor Deposited SiO2 Films [R] . Koller, K. B., Schmidt, W. A., Butler, J. E. 1988

机译：等离子体增强化学气相沉积siO2薄膜的原位红外反射吸收光谱表征

Spectroscopic electrical characterization of post-resistive-transition SiO2 films

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