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首页> 外文会议>2014 IEEE MTT-S International Microwave and RF Conference, Collocated with Intemational Symposium on Microwaves >Millimeter-wave artificial dielectric waveguides for integrated applications
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Millimeter-wave artificial dielectric waveguides for integrated applications

机译：集成应用的毫米波人工介质波导

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摘要

High-quality guided wave devices are key components in integrated millimeter-wave circuits. In this paper, we propose mm-wave planar dielectric waveguides based on thin, anisotropic artificial dielectric layers with very high in-plane permittivity. Waves propagating on such films are surface waves whose field exponentially decays outside the film in the vertical direction, similar to waveguides commonly used in integrated optics. The very high in-plane permittivity of the artificial dielectric layers leads to strong field confinement, and allows the implementation of relatively thin waveguides. This fact, together with the planar structure of these devices, make them highly suitable for monolithic integration. Although the performance of the waveguide proposed is somewhat limited by effective electric and, in particular, magnetic polarization losses at mm-wave frequencies, extensive numerical calculations demonstrate the feasibility of devices with a quality factor up to 26 in the 55-90 GHz range on a 10 Ω.cm silicon substrate.
机译：高质量的导波设备是集成毫米波电路中的关键组件。在本文中，我们提出了基于具有高面内介电常数的各向异性各向异性人工介电层的毫米波平面介电波导。在此类薄膜上传播的波是表面波，类似于集成光学中常用的波导，表面波的场在垂直方向上在薄膜外部呈指数衰减。人造介电层的极高的面内介电常数导致强的电场限制，并允许实现相对较薄的波导。这一事实以及这些器件的平面结构使其非常适合于单片集成。尽管所提出的波导的性能在一定程度上受到有效电的限制，特别是在毫米波频率下的磁极化损耗，但大量的数值计算证明了在55-90 GHz范围内质量因数高达26的设备的可行性。 10Ω.cm的硅基板。

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