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Pb thin films on Si(111): Local density of states and defects

机译:Si(111)上的Pb薄膜:状态和缺陷的局部密度

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Local density of states and atomic structure of the stripped incommensurate phase, the √(3) ×√(7) phase and the 1 × 1 phase of a monolayer of Pb on Si(111) are characterized by scanning tunneling microscopy and spectroscopy. The dI/dV-images reveal congruent local density of states structures for the stripped incommensurate and the √(3) ×√(7) phase but suggest a hexagonal lattice of the local density of states for the 1×1 phase while the atomic structure consists of one more atom in the center of each hexagon. Vacancy defects and impurities show a depletion of local density of states for the stripped incommensurate and √(3) ×√(7) phase. Vacancies and impurities show an increase and no clear depletion in local density of states for the 1 × 1 phase, respectively.
机译:通过扫描隧道显微镜和光谱法表征了在Si(111)上Pb单层的不相称相,√(3)×√(7)相和1×1相的局部状态密度和原子结构。 dI / dV图像揭示了剥离的不相称和√(3)×√(7)相的状态结构的全同局部密度,但建议了1×1相的原子状态的局部六方晶格,而原子结构在每个六角形的中心由一个以上的原子组成。空位缺陷和杂质显示了剥离的不相称和√(3)×√(7)相的局部状态密度的耗尽。对于1×1相,空位和杂质分别显示出局部状态密度的增加和明显减少。

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