• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices amp; Workshop on Piezoresponse Force Microscopy >Study of microstructure evolution and temperature distribution in eutectic SnBi solder joints under high current density
【24h】

Study of microstructure evolution and temperature distribution in eutectic SnBi solder joints under high current density

机译：高电流密度下SnBi共晶焊点的组织演变和温度分布的研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Microstructure evolution and temperature distribution of eutectic SnBi solder joint under high current density of 1×104A/cm2 at room temperature were investigated in the current study. With the increase of current stressing time, a continuous Bi segregation layer was formed and grew along the interface at the anode side, and a Sn rich region was found at the cathode side. Due to the microstructure changes in solder alloys, temperature distribution tended to be nonuniform. Because of the aggregation of Bi atoms, which have higher electrical resistivity and lower thermal conductivity, at the anode side, the temperature of anode was higher than the cathode. Due to the formation of severe cracks in the solder joints, the local Joule Heating effect was enhanced and the local temperature was much higher. It was found that the microstructure evolution induced by electromigration (EM) could alter the temperature distribution. By using the infrared microscope to record temperature in the solder joint during current stressing, the relationship was established between microstructural changes and temperature filed in the SnBi joint under high current density.
机译：研究了室温下1×104A / cm2高电流密度下共晶SnBi焊点的组织演变和温度分布。随着电流应力时间的增加，形成连续的Bi偏析层，并在阳极侧沿界面生长，并在阴极侧发现富Sn区域。由于焊料合金的微观结构变化，温度分布趋于不均匀。由于具有较高电阻率和较低热导率的Bi原子的聚集，在阳极侧，阳极的温度高于阴极。由于在焊点中形成了严重的裂纹，因此提高了局部焦耳加热效果，并且局部温度更高。发现电迁移（EM）引起的微观结构演变可以改变温度分布。通过使用红外显微镜记录电流应力期间焊点中的温度，在高电流密度下建立了SnBi接头中微观结构变化与温度之间的关系。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号