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首页> 外文会议>2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices amp; Workshop on Piezoresponse Force Microscopy >Reliability of Au-Si eutectic bonding
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Reliability of Au-Si eutectic bonding

机译：Au-Si共晶键的可靠性

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摘要

Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It is observed that the voids appear with the increase of sizes of the local bonded areas (reaction areas); that is to say, the bigger the local bonded areas are, the larger possibility to form the voids in the craters. Considering the analyses above, a new model is proposed to test the relationship between the voids and the local reaction areas, and the SEM pictures suggest that when the sizes of the reaction areas are larger than 5 μm, the voids will form in the craters obviously. In other words, the eutectic alloys are insufficient to replenish the cavities generated by the diffusion of silicon when the sizes of the reaction areas are beyond 5 μm.
机译：使用金作为键合介质键合玻璃（7740）和硅（100）晶片，并进行退火以增强约450°C的温度下的键合强度。键合界面中的空隙是导致键合可靠性差的主要原因，扫描电子显微镜（SEM）照片显示，键合后，硅晶片表面的凹坑中有许多空隙。观察到空隙随着局部结合区域（反应区域）的尺寸增加而出现。也就是说，局部结合区域越大，在火山口中形成空隙的可能性越大。综合以上分析，提出了一种新的模型来测试空洞与局部反应区之间的关系，SEM照片表明，当反应区的大小大于5μm时，空洞会明显形成在弹坑中。换句话说，当反应区域的尺寸超过5μm时，低共熔合金不足以补充由硅的扩散产生的空穴。

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