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Symmetrical erosion patterns on single-crystal silicon cathodes after high-voltage vacuum breakdowns

机译:高压真空击穿后单晶硅阴极上的对称腐蚀图案

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We investigated the erosion traces which were forming on a surface of mono-crystalline silicon plates, which were used as cathodes of vacuum gaps. The plates had two surface orientations: 100 and 111. Single vacuum discharges were generated by short voltage pulses (10–80 ns, 200 kV) in gaps of 1–2 mm long. Each discharge leads to appearance a few symmetrical erosion patterns oriented along crystallographic directions. It is supposed that acoustoelectric and micro-plastic phenomena play an important role in figures formation.
机译:我们研究了在单晶硅板表面上形成的腐蚀痕迹,这些腐蚀痕迹被用作真空间隙的阴极。板的表面方向有两种:100和111。单真空放电是由短电压脉冲(10–80 ns,200 kV)在1-2 mm长的间隙中产生的。每次放电都会导致出现一些沿晶体学方向取向的对称腐蚀图案。据推测,声电和微塑性现象在图形形成中起着重要作用。

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