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首页> 外文会议>2014 Third Mediterranean Photonics Conference >Signal to Noise Ratio of silicon photomultipliers measured in the continuous wave regime
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Signal to Noise Ratio of silicon photomultipliers measured in the continuous wave regime

机译：连续波模式下测量的硅光电倍增器的信噪比

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We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature of the SiPM package and at different bias voltages. Furthermore, Excess Noise Factor measurements of the SiPM, as a function of the applied bias, are shown and discussed. Our results show the outstanding performance of this novel class of SiPMs even without the need of any cooling system.
机译：我们在平面波技术上在硅p型衬底上制造的新型一类硅光电倍增管上，在不同的偏置电压，频率和温度下，以连续波方式对信噪比进行了表征。信噪比已测量为光生电流的比率，由锁相放大器进行滤波和平均，以及流向器件的总电流的均方根偏差。测得的噪声考虑了光电流和暗电流产生的散粒噪声。我们还根据信噪比对SiPM和光电倍增管之间的比较进行了比较，该信噪比是SiPM封装温度和在不同偏置电压下的函数。此外，显示并讨论了SiPM的过量噪声因数测量值，它是所施加偏置的函数。我们的结果表明，即使不需要任何冷却系统，这种新型SiPM仍具有出色的性能。

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