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W- and G-Band Solid State Power Combining

机译:W和G波段固态功率组合

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Recent advances in semiconductor technologies have enabled the design and fabrication of mmW MMIC amplifiers with unprecedented gain, output power, and power added efficiency. However, individual mmW MMIC performance is ultimately limited by transistor size and on-die power combining losses. Therefore, in order to achieve significant solid state mmW amplifier power levels, low-loss off-die power combining is obviously necessary. This paper examines trade-offs between on-die, waveguide, and spatial power combining approaches. Several examples of mmW power combined amplifiers are discussed including 10W+ W-band GaN and 1W-class EHF InP amplifiers.
机译:半导体技术的最新进展使mmW MMIC放大器的设计和制造具有空前的增益,输出功率和功率附加效率。但是,个别的毫米波MMIC性能最终受到晶体管尺寸和芯片上功率综合损耗的限制。因此,为了实现显着的固态mmW放大器功率水平,显然必须进行低损耗的裸片功率合并。本文研究了管芯,波导和空间功率组合方法之间的权衡。讨论了mmW功率组合放大器的几个示例,包括10W + W波段GaN和1W级EHF InP放大器。

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