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首页> 外文会议>2015 IEEE Compound Semiconductor Integrated Circuit Symposium >More Than Moore - Wafer Scale Integration of Dissimilar Materials on a Si Platform
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More Than Moore - Wafer Scale Integration of Dissimilar Materials on a Si Platform

机译：超越摩尔-Si平台上异种材料的晶圆级集成

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Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything, particularly for high performance, high frequency RF and mixed signal applications. As a result circuits based on other materials systems, such as III-V semiconductors, are required. However, these other device technologies do not enjoy the integration density, cost benefit and manufacturing infrastructure of Si. So how can we get the 'best of both worlds'? What is the best way to integrate these dissimilar materials with Si? In this talk, we review different heterogeneous integration approaches and summarize our results on the successful wafer-scale, 3D heterogeneous integration (3DHI) of GaN HEMTs and Si CMOS. Our Au-free GaN HEMTs have been successfully fabricated entirely in a Si foundry on semi-standard, 200 mm diameter Si wafers using Cu damascene interconnects. RF performance compares favorably with GaN on SiC devices fabricated in a III-V foundry with Au-based contact and interconnect metallurgy. Oxide bonding is being used to integrate these GaN on Si wafers with Si CMOS wafers. Through-dielectric-vias (TDVs) are used to interconnect the high performance GaN RF devices/circuits with high density CMOS control and logic circuits, resulting in ultra-short, wide-bandwidth interconnects enabling circuit optimization through intimate and arbitrary placement of CMOS logic and control circuitry relative to III-V devices. Through-substrate-vias (TSVs) are used for thermal management. This 'flexible' wafer-scale, integration platform is compatible with other III-V devices, other (non-Si) device/component technologies and any node of Si CMOS or SiGe BiCMOS. The 3DHI process is being used to fabricate cost effective, high performance, digitally enhanced, RF and mixed signal ICs such as 'intelligent' and adaptive/reconfigurable transceivers.
机译：硅技术的进步继续使微电子学发生革命。但是，Si不能做任何事情，特别是对于高性能，高频RF和混合信号应用。结果，需要基于其他材料系统的电路，例如III-V半导体。但是，这些其他器件技术不具备Si的集成密度，成本优势和制造基础设施。那么我们如何才能做到“两全其美”呢？将这些异种材料与Si集成的最佳方法是什么？在本次演讲中，我们回顾了不同的异构集成方法，并总结了成功的晶圆尺寸，GaN HEMT和Si CMOS的3D异构集成（3DHI）的结果。我们的无金GaN HEMT已使用Cu镶嵌互连技术在半直径200 mm的半标准Si晶圆上完全在Si铸造厂成功制造。与在基于Au-金的接触和互连冶金技术的III-V铸造厂制造的SiC器件上的GaN相比，RF性能优越。氧化物键合用于将这些GaN硅晶片与Si CMOS晶片集成在一起。直通介孔（TDV）用于将高性能GaN RF器件/电路与高密度CMOS控制和逻辑电路互连，从而形成超短，宽带互连，可以通过紧密和任意布置CMOS逻辑来优化电路和有关III-V器件的控制电路。基板通孔（TSV）用于热管理。这种“灵活”的晶圆级集成平台可与其他III-V器件，其他（非Si）器件/组件技术以及Si CMOS或SiGe BiCMOS的任何节点兼容。 3DHI工艺正被用于制造具有成本效益，高性能，数字增强的RF和混合信号IC，例如“智能”和自适应/可重新配置的收发器。

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