Teledyne Sci. Co., Thousand Oaks, CA, USA;
III-V semiconductors; MMIC power amplifiers; bipolar integrated circuits; indium compounds; wideband amplifiers; E-band solid state power amplifier; HBT; bandwidth 33 GHz; broadband power amplifier; high-efficiency E-band power amplifier; multifinger heterojunction bipolar transistors; power 340 W to 440 W; size 250 nm; Bandwidth; Gain; Gallium nitride; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Radio frequency;
机译:基带到140-GHz SIGE HBT和100-GHz INP DHBT宽带三堆叠分布式放大器,具有主动偏置终端
机译:220 GHz高效InP HBT功率放大器
机译:用于无线通信的基于InP的高效DHBT有源倍频器
机译:340-440MW宽带,高效电子带PA在INP HBT中
机译:超过1 THz带宽的大规模InP / InGaAs DHBT
机译:高效宽带近衍射极限的紫外介电金属离子
机译:INP DHBT过程中宽带高带宽利用ECL静态分频器