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340-440mW Broadband, High-Efficiency E-Band PA's in InP HBT

机译:InP HBT中的340-440mW宽带,高效E波段PA

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Two E-band (71-76GHz and 81-86GHz) solid-state power amplifiers in 250nm InP HBT are reported. The 71-76GHz PA demonstrates 13.3-16.2dB S21 gain and 33GHz bandwidth P from 71-81GHz is > 360mW. At 76GHz, 439mW P (26.4dBm) is achieved with 12.1dB gain and 26.9% PAE - this corresponds to 1.14W/mm power density. The 81- 86GHz PA demonstrates 12.0-14.3dB S21 gain and 40GHz bandwidth. Output power from 76-86GHz is > 337mW. At 86GHz, 358mW P (25.5dBm) is achieved with 10.2dB gain and 23.6% PAE - this corresponds to 0.93W/mm power density. This SSPA utilizes a novel, compact power cell topology developed for multi-finger HBTs, which overcomes the inability of the RF output interconnects and combiners to carry the high DC bias currents required by the InP HBT PA cells in the thin-film microstrip interconnect. This work improves upon the state- of-the-art for InP HBT and GaN HEMT E-Band SSPAs by demonstrating higher simultaneous power by 1.0- 2.0dB and large bandwidths, where PAE is > 15-20% in continuous wave (CW) operation. The size of the PA's is small, both only 1.95mm x 0.88mm.
机译:据报道,在250nm InP HBT中有两个E波段(71-76GHz和81-86GHz)固态功率放大器。 71-76GHz PA表现出13.3-16.2dB S21增益,而71-81GHz的33GHz带宽P大于360mW。在76GHz时,以12.1dB的增益和26.9%的PAE达到439mW P(26.4dBm)-相当于1.14W / mm的功率密度。 81-86GHz PA展示了12.0-14.3dB S21增益和40GHz带宽。 76-86GHz的输出功率> 337mW。在86GHz时,增益为10.2dB,PAE为23.6%,可实现358mW P(25.5dBm)-相当于0.93W / mm的功率密度。该SSPA利用为多指HBT开发的新颖,紧凑的功率单元拓扑结构,克服了RF输出互连和组合器无法承载薄膜微带互连中InP HBT PA单元所需的高DC偏置电流的麻烦。通过展示更高的同时功率1.0- 2.0dB和大带宽,其中连续波(CW)中PAE> 15-20%,这项工作改进了InP HBT和GaN HEMT E波段SSPA的最新技术操作。功率放大器的尺寸很小,均为1.95mm x 0.88mm。

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