Compact W-Band PA MMICs in Commercially Available 0.1-µm GaAs PHEMT Process

著录项

• 来源
  《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》|2015年|1-4|共4页
• 会议地点 New Orleans LA(US)
• 作者

  Bessemoulin A.; Rodriguez M.; Tarazi J.; McCulloch G.; Parker A.E.; Mahon S.J.;

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• 作者单位

  MACOM Technol. Solutions, North Sydney, NSW, Australia;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  III-V semiconductors; MMIC power amplifiers; driver circuits; gain measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; power transistors; GaAs; GaN; HBT; InP; PHEMT process; PHEMT technology; compact W-band PA MMIC; core amplifier; frequency 80 GHz to 100 GHz; linear gain; medium power amplifiers; power 280 mW; power densities; size 0.1 mum; size 0.25 mm; size 0.97 mm; size 1.95 mm; size 3.5 mm; Frequency measurement; Gain; Gallium arsenide; MMICs; Power amplifiers; P;

  机译：III-V半导体; MMIC功率放大器;驱动器电路;增益测量;砷化镓;异质结双极晶体管;铟化合物;集成电路设计;功率晶体管; GaAs; GaN; HBT; InP; PHEMT工艺; PHEMT技术;紧凑的W波段PA MMIC;核心放大器;频率80 GHz至100 GHz;线性增益;中功率放大器;功率280 mW;功率密度;尺寸0.1毫米;尺寸0.25毫米;尺寸0.97毫米;尺寸1.95毫米;尺寸3.5毫米;频率测量;增益;砷化镓; MMIC;功率放大器; P;